VN0109 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Enhancement-Mode Vertical DMOS FET

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N-Channel Enhancement-Mode
Vertical DMOS FET
Features
'" Free from secondary breakdown
»> Low power drive requirement
» Ease of paralleling
*• Low Ciss and fast switching speeds
* Excellent thermal stability
*• Integral source-drain diode
*• High input impedance and high gain
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
Package
TO-92
VN0109
VN0109N3-
NW
(Die in wafer form)
VN1509NW
Wafer / Die Options
(Die on adhesive tape)
VN1509NJ
VN0109
ND
(Die in waffle pack)
VN1509ND
Product Summary
Pin Configuration
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55°Cto+150°C
SOURCE
DRAIN
GATE
TO-92 (N3)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verity that datasheetsare current before placing orders.
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