UES804 Datasheet, PDF (1/2 Pages) Microsemi Corporation – RECTIFIERS

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
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RECTIFIERS
High Efficiency, 50A
FEATURES
• Very Low Forward Voltage (L15V)
• Very Fast Recovery Times (SOnSec)
• High Surge Capability
• Low Thermal Resistance
• Mechanically Rugged
• Both Polarities Available
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UES804
UES805
UES806
UES804HR2
UES805HR2
UES806HR2
DESCRIPTION
The UES804 is specifically designed
for operation In power switching circuits
operating at frequencies of at least
20KHz.
ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage, UES804, UES804HR2
Peak Inverse Voltage, UES805, UES805HR2
Peak Inverse Voltage, UES806, UESS06HR2
Maximum Average D.C. Output Current @ Tc - 100'C .
Surge Current, 8.3mS
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
200V
300V
400V
50A
600A
S'C/W
. -55°Cto +150'C
POWER CYCLING
These devices possess the unique ability to pass many
thousands of cycles of a stress test designed to evaluate the
integrity of the bonding systems used in the construction of
power rectifiers.
In this stress test, the case of the device is not heat sunk.
Full ratea forward current is supplied to force a case tem-
perature increase at least 75°C, at which time, the current is
removed and the case allowed to cool. The cycle is repeated a
minimum of 5,000 times to simulate equipment being turned
on and off. Extended power cycling tests demonstrate a product
capability in excess of 25,000 cycles.
SWITCHING CHARACTERISTICS
The switching times of these ultra-fast rectifiers increase
relatively little, with temperature or at different currents. Even
in severe applications, such as catch diodes for switching
regulators and output rectifiers for high frequency square
wave inverters, these devices switch many times faster than
the fastest associated transistors. Thus, the stresses on and
powers dissipated in the switching transistors are substantially
less than when using other rectifiers.
MECHANICAL SPECIFICATIONS
UES804
UES80S
UES806
UES804HR2 UES805HR2 UES806HR2
DO-5
-1 pC
r-f
«4
it* - oca
060 WK
IStt .070
n«
3. 72 3 0.13
15? WIN
3 ^{i 0.51}
66TOIA MAX
,090 MAX.
6 7 i .010
3 &HAX
16. DlA. MAX.
MAX
17- = 0.25
9. MAX.
Id OMA1
A DMA*
4 i • CIS
o a MAX.
\~2l _MAX,
11 MAX.
11 13 • 03ft
1.98 MAX
Notttt
1. SUndiid polarity U uthoda-k»tud.
For r*v*n* polarity (anode-to-itud) Met lumx "R", ii. UES804R.
2. All meUI lurficM tin plated.
3. Maximum unlubrlcatad stud tOK|u« 30 Inch pounds.
4. Angular orientation of terminal it undtfintd.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encouragescustomersto verify that datasheets are current before placing orders.
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