English
Language : 

TPV598 Datasheet, PDF (1/2 Pages) Motorola, Inc – UHF LINEAR POWER TRANSISTOR
(Jziisu <Szmi.-dondu.ctoi £Pioduc£i, One.
tx
<J
The RF Line
UHF Linear Power Transistor
Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold
metallized dice and diffused emitter ballast resistors are used to enhance
reliability, ruggedness and linearity.
• Band IV and V (470-860 MHz)
. 4.0 W — Pref@-60dBIMD
. 25V-VCC
• High Gain — 7.0 dB Min, Class A @ f = 860 MHz
• Gold Metallization for Reliability
TPV598
4.0 W, 470- 860 MHz
UHF LINEAR
POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Base Voltage
VCBO
Emitter-Base Voltage
Operating Junction Temperature
VEBO
TJ
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
Characteristic
Value
Unit
27
Vdc
45
Vdc
4.0
Vdc
200
°C
-65to+200
°C
Thermal Resistance, Junction to Case (Tc = 70°C)
Thermal Resistance, Case to Heatsink
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 60 mA, IB = 0)
Collector-Base Breakdown Voltage (Ic = 10 mA, IE = 0)
Emitter-Base Breakdown Voltage (IE = 3.0 mA, IQ = 0)
Collector-Emitter Leakage Current (VCE = 20 V)
ON CHARACTERISTICS
DC Current Gain (IC = 500 mA, VCE = 20 V)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 25 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common-Emitter Amplifier Power Gain
(VCE = 25 V, Pout = 4.0 W, f = 860 MHz, \ = 850 mA)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
HFE
cob
GPE
Intermediation Distortion, 3 Tone
(f = 860 MHz, VCE = 25 V, IE = 850 mA, Pref = 4.0 W,
Vision Carrier = -8.0 dB, Sound Carrier = -7.0 dB,
Sideband Signal = -16 dB, Specification TV05001)
IMD-i
Cutoff Frequency
fi
(VcE = 25 V, Ic = 850 mA)
Symbol
RSJC
ReCH
Min
27
45
4.0
—
10
—
7.0
—
CASE 244-04,
Max
6.2
0.4 Typ
Typ ] Max
—
—
—
—
—
—
—
5.0
—
—
—
20
—
—
-58
2.0
—
Unit
°C/W
°c/w
Unit
Vdc
Vdc
Vdc
mA
—
PF
dB
dB
GHz
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors