TIP562 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

tStmi-donaitctoi 'LPtodueta, line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: [phone]
[phone]
FAX: [phone]
TIP562/563
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEo(sus)= 300V(Min)- TIP562
= 400V(Min)- TIP563
• High Power Dissipation
APPLICATIONS
• Designed for converters, inverters, pulse-width-modulated
regulators, and a variety of power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
TIP562
300
VCBO
Collector-Base Voltage
V
TIP563
400
TIP562
300
VcEO(SUS) Collector-Emitter Voltage
V
TIP563
400
VEBO
Emitter-Base Voltage
8
V
Ic
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC _@Tc=iorrc
Tj
Junction Temperature
Tstg
Storage Temperature
2
A
100
W
200
•c
-65-200 r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance.Junction to Case
MAX
1.0
UNIT
'C/W
PIN 1.BASE
3. COLLECT OR (CASE)
TO-3 package
I
1
ij c
JPL ^4.K
-it
iron
DIM urn MAX
A
3900
B ^{2530 2667}
C ^{r 760} 3.30
0
090 1 10
E
t 40 1.60
G
1092
H
546
K U.40 _Lj.3.50
L 1675 1705
N 1$40 1962
Q
4.00 420
U 30.00 ³⁰²⁰
V
4.30 4~ SO
NJ Semi-Conductorsreserves the right to change test conditions,parameter limits and package dimensions without
notice, Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors