TIP514 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

C/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon PNP Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
TIP514
DESCRIPTION
• Continuous Collector Current-lc= -5A
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=-150V(Min.)
• Collector Power Dissipation-
:Pc=20W@Tcs= 1001C
APPLICATIONS
• Designed for power amplifier and high speed switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
-150
V
Vceo
Collector-Emitter Voltage
-150
V
VEBQ
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-7.5
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta= 25 'C
PC
Collector Power Dissipation
@TC^100'C
Tj
Junction Temperature
-2
A
2
W
20
200
r
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{Thermal Resistance,Junction to Case}
Quality Semi-Conductors
MAX UNIT
5.0 "C/W
•^
2
PIN 1.BASE
2. EMITTER
3 COLLECT OR (CASE)
TO-66 package
i-^{i— fj —H}
t _{—L 1}
C
t-E
I
t
-*4U-D iPL
V-
I-L-*
/ ^rj _VHT^^X^
-BB
It
-3-—^ G B
t
V^{^__/}
1_{f 1}
-oa
111! 11
DIM MM MAX
A 31,40 31.80
B 17.30 17.70
C ^{6.70 7.10}
D 0.70 0.90
E 1.40 1.60
6
5,08 1
H
2.M
K ^ ^{9.SO 10..20}
L ^1:4.70 14.90
H 12.40 12.60
Q j.BO _3.ao
U 24.30 24.50
V 3,50 3.70