TIP162 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlington Power Transistor

^£,mi-(,onductoi Lpiodueti, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlington Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
TIP162
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 380V(Min)
• Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.9V(Max.)@ lc= 10A
APPLICATIONS
• Designed for use in automotive ignition, switching and
motor control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
380
V
VCEO Collector-Emitter Voltage
380
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@T0=25'C
Tj
Junction Temperature
1.0
A
125
W
150
"C
Tstg
Storage Temperature Range
-65-150 "C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ^{Thermal Resistance, Junction to Case 1.0 •c/w}
11
12 3
2
n-»•
>v
-'" J I
1—.v,^ — -»w—1—<•
U w ^R1
2. COLLECTOR
3. aimFER
TO-3PhJ package
B— -
- c—-
.1*41..- Y*X-F^.^*
TuQil/T^—yf\
A^*T'^tE^'J^r'
• ', •"
t iL
'. H
1 t'
K
,*- • 4-'
G -*•-;-*-L
-«-*-J
-*"*-0
— -«-R -«~N-»-
mm
[JIM MIN MAX
A 19.90 20.10
B 15.50 15.70
r _{470 490}
D 0.90 1.10
E 1.90 2.10
F 3,40 3.60
6 2.90 3.10
H _{1 20 340}
J 0.595 0.605
K 20.50 20.70
L 1.90 2,10
N 10.89 10.91
q 4.90 5.10
R 3.35 3.45
S 1.995 2.005
If 5.90 6.10
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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