TIP140T Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60-100V,80W)

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TIP140T / TIP141T / TIP142T
NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base-Emitter Shunt Resistors
• High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.)
• Industrial Use
• Complement to TIP145T/146T/147T
Equivalent Circuit
!
TO-220
I.Base 2.Collector 3.Emitter
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage : TIP140T
:TIP141T
:TIP142T
60
V
80
V
100
V
VCEO
Collector-Emitter Voltage : TIP140T
:TIP141T
:TIP142T
60
V
80
V
100
V
VEBO
Emitter-Base Voltage
lc
Collector Current (DC)
ICP
Collector Current (Pulse)
>B
Base Current (DC)
PC
Collector Dissipation (TC=25°C)
Tj
Junction Temperature
5
V
10
A
15
A
0.5
A
80
W
150
°C
TSTG
Storage Temperature
-6510+150
°C
' These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use,
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