TIP125 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
PLASTIC MEDIUM-POWER
COPLEMENTARY SILICON TRANSISTORS
...designed for general-purpose amplifier and low speed switching
applications
FEATURES:
* Collector-Emitter Sustaining Vortage-
V<wx*w a6°V(Win) -TIP120.T1P125
- 80 V (Min) - TIP121.TIP126
= 100 V (Min) - TIP122.TIP127
* Collector-Emitter Saturation Voltage
VCHW =2-°v (Max > C lc • 3-° A
* Monolithic Construction with Built-in Base-Emitter Shunt Resistor
MAXIMUM RATINGS
Characteristic
Symbol TIP120 TIP121 TIP122
TIP126 TIP126 TIP127
Unit
Collector-Emitter Voltage
VCEO
60
60
100
V
COIIector-Base Voltage
VCBO
60
80
100
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current-Continuous
>c
5.0
A
-Peak
>CM
8.0
Base Current
IB
120
mA
Total Power Dissipation ®TC= 25°C _PD
Derate above 25°C
65
W
0.52
W/°C
Operating and Storage Junction
Tj .TSTO
°C
Temperature Range
-65to+150
TELEPHONE: [phone]
[phone]
FAX: [phone]
NPN PNP
TIP120 TIP125
TIP121 TIP126
TIP122 TIP127
5.0 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-100 VOLTS
65 WATTS
TO-220
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance Junction to Case Rejc
Max
1.92
FIGURE -1 POWER DERATING
*. 10
25 50 75 100 125 150
Tc , TEMPERATURE< °C)
Unit
°c/w
PIN LEASE
2.COILECTOR
4.COU_ECTOR(CASE)
MILLIMETERS
DIM
MIN MAX
A
14.68 15.31
B
9.78 10.42
C
5.01 6.52
D 13.06 14.62
E
3.57 4.07
F
2.42 3.66
G
1.12 1.36
H
0.72 0.96
I
422 4.96
J
1.14
1.38
K
2.20 2.97
L
0.33 0.55
M
2.48 2.96
0
3.70 3.90
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors