SVT6062 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – HIGH SPEED NPN POWER DARLINGTON TRANSISTOR

J.£ii£u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
SVT6062
HIGH SPEED
NPN POWER DARLINGTON
TRANSISTOR
, Line.
TELEPHONE: [phone]
[phone]
FAX: [phone]
TO-3
electrical Characteristics (Tc = 25° C) (unless otherwise specified)
CHARACTERISTIC
SYMBOL MIN
TYP
off characteristics
Collector-Emitter Sustaining Voltage
(In = .5mA)
(Voamo - VCEO Rated)
Collector-Base Voltage
(lc = 0.25mA)
Collector Cutoff Current
(VCB = VCBO Rated)
Emitter Cutoff Current
(VEB-1.5V.lc = 0)
VCEO(sus)
—
450
VCBO
—
500
ICBO
—
—
IEBO
_
—
MAX
UNIT
—
Volts
-
Volts
0.25
mA
200
mA
second breakdown
Second Breakdown with Base Forward Biased
Clamped Inductive soa with Base Reversed Bias
on characteristics
DC Current Gain
<IC=10A,VCE = 5V)
IG s ISA, VCE = 5V)
hr. = 20A.Vr,e = 5V)
Cc•Hector-Emitter Saturation Voltage
lc=10A, la=1A)
lc = IDA, IB « 2A>
lc » 20A, IB « 2A)
Base-Emitter Voltage
lc = 5A.IB*.5A)
lc = 20A.lB«2A)
switching characteristics
Resistive Load
Rise Time
Storage Time
Fall Time
Vcc3300V.tp = 50jiS
IG * 15A. IB1 = 1.5A, lB2 = 2.25A
Inductive toad. Clamped
Storage Time
VGC^SOOV. L= 100 MH
Crossover Time
lc = 15A, IB1 - 1.5A, IB2 = 2.25A
Fall Time
FBSOA
RBSOA
SEE FIGURE 14
SEE FIGURE 17
hFE
40
160
30
115
-
—
10
65
VcE(sat)
-
1.2
1.5
1.15
1.4
1.6
2
V
VBE(sat)
1.95
2.5
V
—
2.3
3.5
V
—
0.3
0.4
Ps
ta
—
2.3
2.5
tf
—
0.5
1.0
t.
—
2.6
—
/IS
tc
—
0.5
—
tf
—
0.12
—
emitter-collector diode characteristics
Forward Voltage
IF * 10A
IF = 25A
VF
._
1.9
Volts
2.8
_'..
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