STW9NA80 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

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STW9NA80
STH9NA80FI
N - CHANNEL 800V - 0.85Q - 9.1A - TO-247/ISOWATT218
FAST POWER MOS TRANSISTOR
TYPE
STW9NA80
STH9NA80FI
VDSS
800 V
800 V
RDS(on)
< 1.0Q
< 1.0U
ID
9.1 A
5.9 A
TYPICAL Ros(on) = 0.85 n
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
• HIGH CURRENT, HIGH SPEED SWITCHING
. SWITCH MODE POWER SUPPLIES (SMPS)
. DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW9NA80 STH9NA80FI
VDS Drain-source Voltage (VGs = 0)
VDGR Drain- gate Voltage (Ros = 20 kSJ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 °C
ID Drain Current (continuous) at Tc = 100 °C
|DM(») Drain Current (pulsed)
Plot ^{Total Dissipation at Tc = 25 °C}
Derating Factor
Viso Insulation Withstand Voltage (DC)
Tglg Storage Temperature
T] ^{Max. Operating Junction Temperature}
•) Pulse width limited by safe operating area
800
800
± 30
9.1
5.9
6
3.9
36.4
36.4
190
80
1.52
0.64
_
4000
-65 to 150
150
V
V
V
A
A
A
W
W/°C
V
°C
°c
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