STW8NA80 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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20 STERN AVE.
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U.S.A.
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STW8NA80
STH8NA80FI
TYPE
STW8NA80
STH8NA80FI
N- CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
VDSS
800 V
800 V
RDS(on)
< 1.50 Q.
< 1.50 n
ID
7.2 A
4.5 A
PRELIMINARY DATA
TYPICAL RDs(0n) = 1.3 Q
+ 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled rug-
gednessand superior switching performance.
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Q(2)
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SWITCH MODE POWER SUPPLIES (SMPS)
. DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW8NA80 STH8NA80FI
VDS Drain-source Voltage (VQS = 0)
800
V
VDGR Drain- gate Voltage (Res = 20 kfi)
800
V
VGS Gate-source Voltage
± 30
V
ID
Drain Current (continuous) at Tc = 25 °C
7.2
4.5
A
ID
Drain Current (continuous) at Tc = 100 °C
4.5
2.8
A
IDM(') Drain Current (pulsed)
28.8
28.8
A
Plot Total Dissipation at Tc = 25 °C
175
70
W
Derating Factor
1.4
0.56
W/°C
V,so Insulation Withstand Voltage (DC)
—
4000
V
Tstg Storage Temperature
-65 to 150
°C
T,
Max. Operating Junction Temperature
• ) Pulse width limited by safe operating area
150
°C
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