STW7NA80 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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STW7NA80
STH7NA80FI
N- CHANNELENHANCEMENTMODE
FAST POWER MOS TRANSISTOR
TYPE
STW7NA80
STH7NA80FI
VDSS
800 V
800 V
RDS(on)
< 1.9 Q
< 1.9 a
ID
6.5 A
4A
TYPICAL Ros(on) = 1.68£2
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SWITCH MODE POWER SUPPLIES (SMPS)
. DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW7NA80 STH7NA80FI
VDS
VDGR
VGS
ID
ID
|DM{»)
Plot
Drain-source Voltage (VGS= 0)
Drain- gate Voltage (Res = 20 kQ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 °C
Drain Current (continuous) at Tc = 100 °C
Drain Current (pulsed)
Total Dissipation at Tc = 25 °C
Derating Factor
800
800
± 30
6.5
4
4
2.5
26
26
150
60
1.2
0.48
V
V
V
A
A
A
W
W/°C
Viso ^{Insulation Withstand Voltage(DC)}
Tstg Storage Temperature
T, ^{Max. Operating Junction Temperature}
(•) Pulse width limited by safe operating area
—
4000
V
-65 to 150
°C
150
°C
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