STW7NA100 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Dnc.
STW7NA100
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
VDSS
RDS(on)
ID
STW7NA100
1000 V < 1.7Q
7A
TYPICAL RDS(on) = 1.45 Q
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
GATE CHARGE MINIMISED
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SWITCH MODE POWER SUPPLY (SMPS)
. DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
TELEPHONE: [phone]
[phone]
FAX: [phone]
TO-247
INTERNAL SCHEMATIC DIAGRAM
D(2)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (Ros = 20 kfl)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 °C
ID Drain Current (continuous) at Tc = 100 °C
!DM(«) Drain Current (pulsed)
Plot Total Dissipation at Tc = 25 °C
Derating Factor
Viso ^{Insulation Withstand Voltage (DC)}
TslQ Storage Temperature
Tj ^{Max, Operating Junction Temperature}
•) Pulse width limited by safe operating area
Value
STW7NA100
1000
1000
± 30
7
4.4
2B
190
1.52
—
-65 to 150
150
Unit
V
V
V
A
A
A
W
w/°c
V
°c
°c
Quality Semi-Conductors