STP6NA80 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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SPRINGFIELD, NEW JERSEY 07081
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STP6NA80
STP6NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STP6NA80
STP6NA80FI
VDSS
800V
800V
RDS(on)
< 1.9ii
< 1.9 n
ID
5.7 A
3.4 A
TYPICAL Ros(on) ^ 1.68 ti
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low Ros(on) and gate charge, unequalled
ruggedness and superior switching performance.
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SWITCH MODE POWER SUPPLIES (SMPS)
. DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
6(1)
5(3)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP6NA80
STP6NA80FI
VDS Drain-source Voltage (Vcs = 0)
800
V
VDGR Drain-gate Voltage (RGs = 20 ki2)
800
V
VGS Gate-source Voltage
± 30
V
ID Drain Current (continuous) at Tc = 25 °C
5.7
3.4
A
ID ^{Drain Current (continuous) at Tc = 100 °C}
3.6
2.1
A
!DM(») Drain Current (pulsed)
23
23
A
Plot Total Dissipation at Tc = 25 °C
Derating Factor
125
45
W
1
0.36
W/°C
Viso Insulation Withstand Voltage (DC)
—
2000
V
Tstg Storage Temperature
-65 to 150
°C
Tj ^{Max. Operating Junction Temperature}
(•) Pulse width limited by safe operating area
150
°C
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