STP5NA80 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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STP5NA80
STP5NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STP5NA80
STP5NA80FI
VDSS
800 V
800 V
RDS(on)
< 2.4Q
< 2.4 £}
ID
4.7 A
2.8 A
TYPICAL Ros(on) = 1.8H
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low Ros(on) and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SWITCH MODE POWER SUPPLIES (SMPS)
. DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3(2-)
G (1)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP5NA80
STP5NA80FI
VDS Drain-source Voltage (VGS= 0)
800
V
VDGR Drain-gate Voltage (RGs = 20 kft)
800
V
VGS Gate-source Voltage
± 30
V
ID Drain Current (continuous) at Tc = 25 °C
4.7
2.8
A
ID Drain Current (continuous) at Tc = 100 °C
3
1.8
A
!DM(») Drain Current (pulsed)
19
19
A
Ptot Total Dissipation at Tc = 25 °C
Derating Factor
125
45
W
1
0.36
w/°c
Viso Insulation Withstand Voltage (DC)
Tstg Storage Temperature
TJ Max. Operating Junction Temperature
•) Pulsewidth limited by safe operating area
—
2000
V
-65 to 150
°c
150
°c
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