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STP36NE06 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET POWER MOSFET
, One,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
STP36NE06
STP36NE06FP
N - CHANNEL 60V - 0.032Q - 36A - TO-220/TO-220FP
STripFET™ POWER MOSFET
TYPE
STP36NE06
STP36NE06FP
VDSS
60 V
60 V
RDS(on)
< 0.040 £2
< 0.040 n
TYPICAL RDS(on) = 0.032 Q.
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100 °C
APPLICATION ORIENTED
CHARACTERIZATION
ID
36 A
20 A
TO-220
TO-220FP
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SOLENOID AND RELAY DRIVERS
. MOTOR CONTROL, AUDIO AMPLIFIERS
. DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP36NE06 STP36NE06FP
VDS Drain-source Voltage (VGS = 0)
60
V
VDGR
VGS
ID
ID
!DM(»)
Plot
Drain- gate Voltage (Ros = 20 kfi)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 °C
Drain Current (continuous) at Tc = 100 °C
Drain Current (pulsed)
Total Dissipation at Tc = 25 °C
Derating Factor
60
± 20
36
20
24
14
144
144
100
35
0.66
0.27
V
V
A
A
A
W
W/°C
V,so Insulation Withstand Voltage(DC)
dv/dt Peak Diode Recovery voltage slope
—
2000
V
7
V/ns
Tstg Storage Temperature
T, Max. Operating Junction Temperature
•) Pulse width limited by safe operating area
-65 to 175
°C
175
°C
(1) Iso £ 36 A,di/dt< 300A/|is, VDD< VIBRIDSE, T,< TJMAX
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductorsis believed to.be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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