STP36N06 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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STP36N06
STP36N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP36N06
STP36N06FI
VDSS
60 V
60 V
RDS(on)
< 0.04 n
< 0.04 n
ID
36 A
21 A
TYPICAL Ros(on) = 0.03 Q
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175°C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
S(3)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (Vos = 0)
VDGR Drain- gate Voltage (Res = 20 kQ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 °C
ID Drain Current (continuous) at Tc = 100 °C
!DM(») Drain Current (pulsed)
Plot Total Dissipation at Tc = 25 °C
Derating Factor
Viso Insulation Withstand Voltage (DC)
Tstg Storage Temperature
T, Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
STP36N06
STP36N06FI
60
60
±20
36
21
25
14
144
144
120
40
0.8
0.27
—
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V
°C
°C
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