STP25N06 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
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STP25N06
STP25N06FI
N - CHANNEL ENHANCEMENTMODE
POWER MOS TRANSISTOR
TYPE
STP25N06
STP25N06FI
VDSS
60 V
60 V
RoS(on)
< 0.065 ii
< 0.065 n
ID
25 A
16 A
TYPICAL RDS(on) = 0.048 Q
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175°C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
0(2)
0 (1)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR ^{Drain- gate Voltage (Ros = 20 kti)}
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 °C
ID Drain Current (continuous) at Tc = 100 °C
!DM(.) Drain Current (pulsed)
Plot Total Dissipation at Tc = 25 °C
Derating Factor
Viso Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj ^{Max. Operating Junction Temperature}
(•) Pulse width limited by safe operating area
Quality Semi-Conductors
Value
STP25N06
STP25N06FI
60
60
+ 20
25
16
17
11
100
100
90
40
0.6
0.27
—
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V
°C
°C