STE53NA50 Datasheet, PDF (1/4 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
One,
TELEPHONE: [phone]
[phone]
FAX: [phone]
STE53NA50
N - CHANNEL ENHANCEMENTMODE
FAST POWER MOS TRANSISTOR
TYPE
STE53NA50
VDSS
RoS(on)
500 V ! < 0.085 Si
ID
53 A
TYPICAL RDs<on)= 0.075 ii
HIGH CURRENT POWER MODULE
AVALANCHE RUGGED TECHNOLOGY
VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
EASY TO MOUNT
SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
EXTREMELY LOW Rth (Junction to case)
VERY LOW INTERNAL PARASITIC
INDUCTANCE
ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS
. SMPS&UPS
. MOTOR CONTROL
. WELDING EQUIPMENT
. OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (Res = 20 ki"2)
VGS Gate-source Voltage
ID • Drain Current (continuous) at Tc = 25 °C
ID
• Drain Current (continuous) at Tc = 100 °C
IDM(-) i Drain Current (pulsed)
Ptot ; Total Dissipation at Tc = 25 °C
Derating Factor
T5,s ^{Storage Temperature}
Tj
;Max. Operating Junction Temperature
Viso ^{Insulation Withhstand Voltage (AC-RMS)}
(•) Pulse widih limited bystife operating area
Value
500
500
± 30
53
33
212
460
3.68
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/°C
°C
°C
V
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors