S2800 Datasheet, PDF (1/2 Pages) Motorola, Inc – SCRs 10 AMPERES RMS 50 thru 800 VOLTS

^s.nii-donaiLcto'i ^Products., Una.
u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
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S2800
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
AO-
-O K
(TO-220AB)
MAXIMUM RATINGS (Tj = 25°C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1 )
(Tj = 25 to 100°C, Gate Open)
F
A
B
S2800 D
M
N
VRRM
Volts
VDRM
50
100
200
400
600
800
Peak Non-repetitive Reverse Voltage and
Non-Repetitive Off-State VoltageO )
F
A
B
S2800 D
M
N
VRSM
Volts
VDSM
75
125
250
500
700
900
RMS Forward Current
(All Conduction Angles)
TC = 75°C
'T(RMS)
10
Amps
Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C)
Circuit Fusing Considerations (t = 8.3 ms)
!TSM
|2t
100
Amps
40
A2S
Forward Peak Gate Power (t « 10 us)
PGM
16
Watts
Forward Average Gate Power
PG(AV)
0.5
Watt
Operating Junction Temperature Range
TJ
-40 to +100
°C
Storage Temperature Range
Tstg
^tOto+150
°c
• VDRMar|d VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate \e shall not
source such that the voltage ratings of the devices are exceeded.
—
Quality Semi-Conductors