S12200H Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – RMS on -state current

J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
S12xxxH
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ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
rr(RMS) RMS on-state current
(1 80° conduction angle)
Tc=90°C
12
A
ll(AV)
Average on-state current
(1 80° conduction angle)
Tc-90°C
7.6
A
ITSM Non repetitive surge peak on-state current tp •8.3 ms
132
A
(Tj initial = 25°C)
tp-10ms
120
ft
I2 1 Value for fusing
tp = 10 ms
72
A2s
dl/dt Critical rate of rise of on-state current
|Q = 100mA dio/dt = 1 A/us.
^r
Storage and cpt siting junction temperature range
Tl
Maxinx -n lead temperature for soldering during 1 0s at
4.£ nn) from case
100
A/us
-40, +150
"C
-40, +125
260
°c
Symbol
Parameter
VDRM Repetitive peak off-state voltage
VRRM Tj-125°C
Voltage
Unit
B D MN
200 400 600 800 V
S12xxxH
THERMAL RESISTANCES
Symbol
Parameter
RthQ-a) Junction to ambient
Rth(j-c) Junctionto case for DC
QATE CHARACTERISTICS (maximum values)
PG(AV)-1W PQM-10W(tp.20us) bM-4A(tp-20ns)
Value
60
3
Unit
"C/W
°c/w
Quality Semi-Conductors