RFP4N100 Datasheet, PDF (1/2 Pages) Intersil Corporation – 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

<^£.mi-(2onditctoi LPioducti, Una.
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RFP4N100, RF1S4N100SM
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4.3A, 1000V, 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N100
TO-220AB
RFP4N100
RF1S4N100SM
TO-263AB
F1S4N100
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
,. - .-"•*'„, GATE
X*
Features
• 4.3A, 1000V
• rDS(ON) = 3.500Q
• UIS Rating Curve (Single Pulse)
• -55°C to 150°C Operating Temperature
Symbol
QD
Ga
6S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
"(FLANGE)
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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