RFP12N18 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Enhancement Mode Power Field Effect Transistors

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
ioduct6,, Line.
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RFM12N18/12N20
RFP12N18/12N20
N-Channel Enhancement Mode
Power Field Effect Transistors
Abaolut* Maximum Ratings (Tc - 260Q,Unle«
RFU12N1I
DrabfSoufc* VolUg*
,,, ,
Continuous Drain Outran!
RMS Continuous
PuUed Drain Current..,,,
.... ID
inu
Galfr-SourcaVotta0>
VRS
Maximum Power Dlulpation
TC » +25OC
At>Ov«Tc-+25°C,D«rataLJn«riY ••
Temparaturaflanoa
.. TJ,T8TO
180
180
12
30
±20
100
04
-$610+150
HFU12N20
200
300
12
30
±20
100
0*
-5510+150
RFPIWU
180
100
12
30
±20
75
Of
-55 la+150
RFP1XN2O
500
ZOO
12
3O
±20
75
0.6
-55 10*150
UNIT*
V
V
A
A
V
W
W/»C
«C
ELECTRICAL CHARACTERISTIC*, At Cut remperefur* (r.)>25'C unlttt othwwltt tpfdllfd
CHMUCTIHWTIC
Drain-Source Breakdown Voltage
Qate-Threthold Voltage
Zero-Oite Voltage Drain Current
•VMBOL
BVwt
yum
lew
Gilt-Source Leakage Current
Drain-Source On Voltage
lew
V»(on)»
Static Drain-Source On Refinance
Forward Tranaconductance
Input Capacitance
Output Capacitance
Reveree-Tranafer Capacitance
Turn-On Delay Time
Riw Time
Turn-On Delay Time
Fall Time
Thermal Rebalance Junction>to-Cue
r»(on,«
"""
C*.
c—
c_
Won)
j,
U(otl)
t>
RM
TUT
CONDITION**
lo-lmA
V«-0
VH-VM
lo>1 mA
V»-145 V
v»-ieo v
Te«125'C
VM-145V
VM-180V
V«-±20V
VD.-O
V^10V
If 12 A
VM>10V
VM-10V
V»-10 V
V«-25V
VM-OV
l-IMHz
Vw»100V
!«•**
Fio-'iv'so n
Vw-10 V
RFM12N18.
RFM12N20
RFP12N18,
RFP12N20
uMrrs
RFMiaM18 Mina M20
MP12 N18
Hln. •ax. Ma. Hal.
180 -~ 200 —
UNIT*
V
2
4
2
4
V
^
1
1
*<A
-
60
-
SO
~"
100
~
100
nA
^
1.6
~-
1.5
—
3.6
—
3f
— OJ5 ~- 0,25 a
4
—
—
—
35(typ
30(typ
20(typ
05(lyp
-
_
m~
1700
BOO
300
SO
200
180
1(0
1.25
ur
4
_
—_
3S(lyp
^Ottyp
20(typ
I05(lyp
-
-
-^
1700
600
300
50
200
180
160
1.25
1.67
mho
pF
•c/w
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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