RFM10N12 Datasheet, PDF (1/2 Pages) GE Solid State – N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

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RFM10N12, RFM10N15, RFP10N12, RFP10N15
N-Channel Enhancement-Mode
Power Field-Effect Transistors
10 A, 120V—150V
ros(on): 0.3 O
Features:
• SO/4 is power-dissipation limited
m Nanosecond switching speeds
m Linear transfer characteristics
m High Input Impedance
m Majority carrier device
N-Channel Enhancement Mode
The RFM10N12 and RFM10N1S and the'RFP10N12 and
RFP10N15* are n-channel enhancement-mode silicon-gate
power field-effect transistors designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high-power bipolar
switching transistors requiring high speed and low gate-
drive power. These types can be operated directly from
Integrated circuits.
The RFM-lypes are supplied in the JEDEC TO-204AA steel
package and the RFP-types in the JEDEC TO-220AB plastic
package.
TERMINAL DESIGNATIONS
RFM10N12
RFM10N15
HFP10N12
RFP10N1S
GATE
JEDEC TO-204AA
DRAIN
FLANGE)-*
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TOP VIEW
JEDEC TO-220AB
MAXIMUM RATINGS, Absolute-Maximum Values (Tc=ZS° C):
DRAIN-SOURCE VOLTAGE
VMS
DRAIN-GATE VOLTAGE (R^l Mf5) ... VKM
GATE-SOURCE VOLTAGE
Vra
DRAIN CURRENT, RMS Continuous
ID
Pulsed
lou
POWER DISSIPATION @ Tc=2S'C
PT
Derate above Tc-25°C
OPERATING AND STORAGE
TEMPERATURE
T,, T«
RFM10N12
120
120
76
0.6
RFM10N15
150
150
75
0.6
±20
10
25
-55 to+150
RFP10N12
120
120
60
0.48
RFP10N15
1SO
150
60
0.48
V
V
V
A
A
W
wrc
«c
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