RFK35N10 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Power MOS Field-Effect Transistors

J.EIIE.U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
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RFK35N08, RFK35N10
Power MOS Field-Effect Transistors
N-Channel Enhancement-Mode
Power Field-Effect Transistors
35 A, 80V -100V
ros(on) = 0.055 n
Feature::
• SOA is power-dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High Input Impedance
• Majority carrier device
N-CHANNEL ENHANCEMENT MODE
TERMINAL DIAGRAM
The RFK35N08 and RFK35N10* are n-channel enhance-
ment-mode silicon-gate power field-effect transistors de-
signed for applications such as switching regulators. switch-
Ing converters, motor drivers, relay drivers, and drivers for
high-power bipolar switching transistors requiring high
speed and low gate-drive power. These types can be oper-
ated directly from integrated circuits.
The RFK-types are supplied in the JEDEC TO-204AE steel
package.
RFK35N08
RFK35N10
TERMINAL DESIGNATIONS
JEDEC TO-204AE
MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25° C):
DRAIN-SOURCE VOLTAGE
.*
DRAIN-GATE VOLTAGE. R,,=1 MO
."
GATE-SOURCE VOLTAGi
".."..,"
."
DRAIN CURRENT. RMS Continuous
Pulsed
POWER DISSIPATION @ TC=26'C
Derate above TC=2S°C
OPERATING AND STORAGE TEMPERATURE
Voss
VKM
Vos
lo
IDM
PT
Tt T.,,
RFK35N08
80
±20
35
100
150
1.2
-5510*150
RFK3SN10
100
100
V
V
V
A
A
W
W/*C
•C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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