RFH45N05 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – POWER MOS FIELD EFFECT TRANSISTORS

^^mi-donductoi Lpioauati, Ona.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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RFH45N05, RFH45N06
Power MOS Field-Effect Transistors
N-Channel Enhancement-Mode
Power Field-Effect Transistors
45 A, 50 V - 60 V
rostoni = 0.040 n
Features:
SOA is power-dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
High input impedance
Majority carrier device
High-current, low-inductance package
TERMINAL DIAGRAM
N-CHANNEL ENHANCEMENT MODE
The RFH45N05 and RFH45N06' are n-channel enhance-
ment-mode silicon-gate power field-effect transistors
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers, and
drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. These types
can be operated directly from Integrated circuits.
The RFH-types are supplied in the JEDEC TO-218AC
plastic package.
RFH45N05
RFH45N06
TERMINAL DESIGNATIONS
JEDEC TO 218AC
MAXIMUM RATINGS, Absolute-Maximum Values (To = 25" C):
DRAIN-SOURCE VOLTAGE
DRAIN-GATE VOLTAGE. R,. " 1 MO
GATE-SOURCE VOLTAGE
DRAIN CURRENT. RMS Continuous
PulfiSd
POWER DISSIPATION @ Tc = 25'C
Derate above Tc - 25° C
OPERATING AND STORAGE TEMPERATURE.
VDSS
VOOB
Vos
ID
IDU
PT
.T..T.,
RFH45NOS RFH4SN06
so
60
so
60
±20
45
100
150
1.2
.-55(0+150.
V
V
V
A
A
W
W/'C
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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