PN4250A Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

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PN4250A
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
Ic
Tj, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current- Continuous
Operating and Storage Junction Temperature Range
60
60
5.0
500
-55to-c150
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits- The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA - 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RUJC
Thermal Resistance, Junction to Case
RflJA
Thermal Resistance, Junction to Ambient
Max
PN4250A
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW7°C
°C/W
°C/W
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