PN4117A Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel Switch

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PN4117A
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N-Channel Switch
• This device is designed for low current DC and audio application.
These devices provide excellent performance as input stages for sub-
picoamp instrumentation or any high impedance signal sources.
• Sourced from process 53.
1
TO-92
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
VDG
Drain-Gate Voltage
VGS
Gate-Source Voltage
IGF
Forward Gate Current
TSTG
Operating and storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
Value
40
-40
50
-55- 150
NOTES:
1. These ratings are based on a maximum junction temperature of 150degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
mA
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
V(BR)GSS ^{Gate-Source Breakdown Voltage}
VGS(off) Gate-Source Cutoff Voltage
IGSS
Gate Reverse Current
On Characteristics
DSS
Zero-Gate Voltage Drain Current *
Small Signal Characteristics
VDS = 0, !G = -1uA
VDS = -10V, ID = 1.0nA
VDS = 0V, VGS = -20V
; = 1 0 V , VGS = <
gfs
Common Source Forward Transconductance VDS = 10V, VGS = 0
f = 1.0KHz
9oss
Common Source Output Conductance
VDS = 10V, VGS = 0
f = 1KHz
RE(YFS)
Common Source Forward Conductance
VDS = iov, VGS = 0
f = 30MHz
C|SS
Input Capacitance
VDS = 10V, VGS = 0
f = 1.0KHz
Wss
Reverse Transfer Capacitance
• Pulse Test: Pulse Width < 300ns, Duty Cycle < 1.0%
VOS=10V, VGS = 0
f = 1.0MHz
Min. Typ. Max. Units
-40
V
-0.6
-1.8
V
-1.0
PA
30
90
70
210 mmhos
3.0 mmhos
60
mmhos
3.0
pF
1.5
pF
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
PD
Rejc
RGJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
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