PMD18D100 Datasheet, PDF (1/2 Pages) Seme LAB – NPN DARLINGTON POWER TRANSISTOR

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CX
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
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PMD18D100
MECHANICAL DATA
Dimensions in mm
L
*....*
TO3 Package.
Case is collector.
NPN DARLINGTON
POWER TRANSISTOR
FEATURES
• TO3 PACKAGE
• 100V
• 100APEAK
• 300 WATTS
DESCRIPTION
The PMD18D100 is an NPN Darlington
Power Transistor in a hermetic TO3 package.
The device is a monolothic epitaxial structure
with built in base-emitter shunt resistor
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
Ic
Collector - Base Voltage (Open Emitter)
Collector - Emitter Voltage (Open Base)
Emitter - Base Voltage (Open Collector)
Collector Current Continuous
Peak
IB
PD
Tj,TSTG
Base Current
Total Power Dissipation at Tcase= 50°C
Operating Junction and Storage Temperature
9JC
Thermal Resistance
100V
100V
5V
50A
100A
1.5A
300W
-65 to 200°C
0.4°C/W
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
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