PMD16K80 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlingtion Power Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una,
Silicon NPN Darlingtion Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
PMD16K80
DESCRIPTION
• High DC current gain
• Collector-Emitter Sustaining Voltage-
VcEO(sus)= SOV(Min)
• Complement to type PMD17K80
<^{"* \j} J*
APPLICATIONS
• Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
Ic
Collector Current -Continuous
20
A
ICP
Collector Current-Peak
40
A
IB
Base Current
0.5
A
PC
Collector Power Dissipation@Tc=25°C
200
W
Tj
Junction Temperature
150
•c
Tstg
Storage Temperature
-65-200 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
ThermalResistance, Junction to Case 0.875
'C/W
1
# TW— —«w-
R1
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
^
r^"-N-*!
,
I
t !1 1
IE _!
r_r
—IU-D JPL
K— U —H
r ^{V^}
h-L-~l
-BH
/ • ^{""1^\ ^s} _{t t}
% <^{; B}
^ _t 1 _V
1
-BH
nun
DIM MN MAX
A
39XM5
B 2530 36 £7
C
7.80 8.30
D 0.90 1 10
E 1.40 160
G
10.92
H
546
l< ^{11.40 13.50}
L 1675 [17fl5
N 19.40 1962
g
4.00 420
u 30.00 ³⁰²⁰
V
430 433
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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