PMD16K60 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

^Eini-Conductoi ^Products., One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlingtion Power Transistor
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FAX: [phone]
PMD16K60
DESCRIPTION
• High DC current gain
• Collector-Emitter Sustaining Voltage-
VcEO<sus)= 60V(Min)
• Complement to type PMD17K60
APPLICATIONS
• Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VGEO ^{Collector-Emitter Voltage}
60
V
VEBO
Emitter-Base Voltage
5.0
V
. Ic
Collector Current -Continuous
20
A
ICP
Collector Current-Peak
40
A
IB
Base Current
0.5
A
PC
Collector Power Dissipation@Tc=25'C
200
W
Tj
Junction Temperature
Tstg
Storage Temperature
150
°C
-65-200
"C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
ThermalResistance, Junction to Case
MAX UNIT
0.875 •c/w
J}
<y
L-ssv— *-JW-
R1
PIN
l.BASE
2, EMITTER
3. COLLECT OR (CASE)
TO-3 package
I
t_E
; ^{r1 -N-i1}
i
C
1
-4U-D ici
LK
v~, r~£~s A^SB
t T ^{"T^X / i}
9 _i ^{-|—^}
^- ff^^
c^{> B}
V_•BED
nun
DIM MW VIM
p,
3900
B ^{2530 26 «7}
C
780 8.30
D
090 1.10
£
1.40 1,60
g
1092
H
546
K 11.40 1350
L 16.75 17.05
H 1940 1962
Q
4.00 420
U 30.00 ³⁰³⁰
V
430 4,50
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