PMD16K100 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Silicon NPN Darlingtion Power Transistor

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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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Silicon NPN Darlingtion Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
PMD16K100
DESCRIPTION
• High DC current gain
• Collector-Emitter Sustaining Voltage-
VCEO(susr 100V(Min)
• Complement to type PMD17K100
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APPLICATIONS
• Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO ^{Collector-Emitter Voltage}
100
V
VEBO ^{Emitter-Base Voltage}
5.0
V
Ic
Collector Current -Continuous
20
A
ICP
Collector Current-Peak
40
A
IB
Base Current
0.5
A
PC
Collector Power Dissipation@Tc=25°C 200
W
Tj
Junction Temperature
150
•c
Tstg ^{Storage Temperature}
-65-200 6C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-c ^{ThermalResistance, Junction to Case}
MAX UNIT
0.875 °c/w
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R2
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
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£ 11.40 _13.50
L 16.75 1705
N 19.40 1962
g
4.00 420
U 3000 3020
V
430 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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