PMD11K100 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlingtion Power Transistor

^s-mi-dondiLctoi iJ-*redacts., Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
PMD11K100
PNP POWER DARLINGTON
ABSOLUTE
MAXIMUM RATINGS
PARAMETER
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltaoe
Collector Current
Continuous
Peak
Base Current
Thermal Resistance
Total Internal Power
Dissipation @ Tc = 50°C1
Operating Junction and
Storage Temperature
SYMBOL MAXIMUM
VCFO
100
Veto
100
VEBO
5
Ic
12
20
IB
0.2
eJC
1.0
PD
150
Tj _{-65 to +200}
TSTG
UNITS
Vdc
Vdc
Vdc
Adc
Adc
"C/Watt
Watts
°C
" For operation above Tc = 50°C, derate <g 1.0 W/°C.
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FAX: [phone]
NOTES
1 DIMENSIONING AND TOLEHANCING PER ANSI
V145M, 1982.
I CONTROtUNG DIMENSION INCH
3AURUIESAND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLT.
i MUMETERS
MOCS
OMI MN MAX MM
A! -
38,37 —
I - !1M —
c : *35 sjs 023)
MAX J
15SO 1
0830 1
0315 1
D 1 097
109 0038 0043 1
E : 1.40
'77
0056 0070 1
F
30.15 BSC
1 187 flSC
G
1092 BSC
0430 6SC
H
5 46 BSC
0 215 BSC
J
16 89 BSC
DECS BSC
K
1118 '219
0440 0480 1
Q 384 119 0151 016S |
II
-
2667 j _
1050 |
U 483 533 0190 0.210 |
V I 3.84 , 4 1 9 3151 0.165 1
STYLE 1:
HN1. BASE
2. EMITTER
CASE COUEaOR
TO-204AA
(TO-3)
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