PMD10K80 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
£/-'10ducts., Dna.
Silicon NPN Darlingtion Power Transistor
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PMD10K80
DESCRIPTION
• High DC current gain
• Collector-Emitter Sustaining Voltage-
VCEO(SUS)= SOV(Min)
• Complement to type PMD11K80
APPLICATIONS
• Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO ^{Collector-Base Voltage}
80
V
VCEO ^{Collector-Emitter Voltage}
80
V
VEBO ^{Emitter-Base Voltage}
5.0
V
Ic
Collector Current -Continuous
12
A
ICP
Collector Current-Peak
20
A
IB
Base Current
0.2
A
PC
Collector Power Dissipation@Tc=25"C
150
W
Tj
Junction Temperature
150
•c
Tstg
Storage Temperature
-65-200 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{ThermalResistance, Junction to Case}
MAX UNIT
1.17 r/w
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
f-N-1
I
I
iran
DW MM MAX
A
3900
B_c
25.30 26*7
7.80 8.30
D 0.90 1.10
E
1.40 1.60
G
10.92
H
546
R 1140 13.50
L 16.75 1705
H 19.40 19.62
g
4.00 420
u 30.00 3020
V
4.30 450
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
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