PMD10K60 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Darlingtion Power Transistor
TELEPHONE: [phone]
[phone]
FAX: [phone]
PMD10K60
DESCRIPTION
• High DC current gain
• Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 60V(Min)
• Complement to type PMD11K60
APPLICATIONS
• Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO ^{Collector-Emitter Voltage}
60
V
VEBO Emitter-Base Voltage
5.0
V
Ic
Collector Current -Continuous
12
A
ICP
Collector Current-Peak
20
A
IB
Base Current
0.2
A
PC
Collector Power Dissipation@Tc=25°C
150
W
T]
Junction Temperature
Tstg
Storage Temperature
150
'C
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ^{ThermalResistance, Junction to Case}
MAX UNIT
1.17 r/w
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
rani
DW MM MAX
A
39JDO
B 25,30 26*7
c
7.80 6.30
D 0.90 1.10
E 1 40 1.60
<t
10.92
H
54S
K ^{11.40 13.50}
L 16.75 17XJ5
N 19,40 19.62
q 400 420
u 3CXU ³⁰²⁰
V
4.30 430
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders
Quality Semi-Conductors