PMD10K100 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlingtion Power Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon NPN Darlingtion Power Transistor
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PMD10K100
DESCRIPTION
• High DC current gain
• Collector-Emitter Sustaining Voltage-
VCEO(sus)=100V(Min)
• Complement to type PMD11K100
APPLICATIONS
• Designed for general purpose amplifier and low frequency
switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
5.0
V
Ic
Collector Current -Continuous
12
A
ICP
Collector Current-Peak
20
A
IB
Base Current
0.2
A
PC
Collector Power Dissipation@Tc=25'C
150
W
Tj
Junction Temperature
150
gc
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
ThermalResistance, Junction to Case
MAX UNIT
1.17 •c/w
R1 R2
PIN
1.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
nun
DIM UN I MAX
A
3900
B_c
25.30 26 £7
7.80 8.30
D
0.90 1 10
E
1 40 160
<*
1052
H
548
ft 11.40 13.50
L 16.75 17.05
H 19.40 19.62
g
4.00 420
u 30M 3020
V
4.30 450
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notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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