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NDP606A Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – N-Channel Enhancement Mode Power Field Effect Transistor
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NDP605A/NDP605B, NDP606A/NDP606B
N-Channel Enhancement Mode
Power Field Effect Transistor
General Description
These n-channel enhancement mode power field effect
transistors are produced using National's proprietary, high
cell density, DMOS technology. This very high density pro-
cess has been especially tailored to minimize on-state re-
sistance, provide superior switching performance, and with-
stand high energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low voltage
applications such as automotive and other battery powered
circuits where fast switching, low in-line power loss, and re-
sistance ID transients are needed.
Features
• 48 and 42 Amp, 50V and 60V, Ros(on) - 0.025J1 and
0.028ft
• Critical DC electrical parameters specified at elevated
temperature
• Rugged internal source-drain diode eliminates the need
for external Zener Diode Transient Suppressor
• 175*C maximum Junction temperature rating
• Easily paralleled for higher current applications
• High density cell design (3 million/in?) for extremely low
Lower RrjS(on) temperature coefficient
OS
TO-220AB
Absolute Maximum Ratings
Symbol
VDSS
VDGR
VGSS
ID
PD
TJ.TSTG
TL
Parameter
Drain-Source Voltage
Drain-Gate Voltage (RGs - 1 MJ1)
Gate-Source Voltage—Continuous
—Non Repetitive (tp < 50 jis)
Drain Current—Continuous
—Pulsed
Total Power Dissipation ® TC = 25*C
Derate Above 25*C
Operating and Storage
Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/e" from Case for 5 sec.
NDP606A NDP605A NDP606B NDP605B
60
SO
60
50
60
50
60
SO
±20
±40
48
42
144
126
100
0.67
-65 to 175
275
Units
V
V
V
A
W
wrc
•c
•c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customersto verify that datasheets are current before placing orders.
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