MUR30120 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Ultra Fast Recovery Diodes

, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Ultrafast Recovery Rectifier
TELEPHONE: [phone]
[phone]
FAX: [phone]
MUR30120
FEATURES
• Ultrafast Recovery Time
• Low Forward Voltage
• Low Leakage Current
• 175°C Operating Junction Temperature
• High Temperature Glass Passivated Junction
MECHANICAL CHARACTERISTICS
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260"C Max.
for 10 Seconds
APPLICATIONS
• Designed for use in switching power supplies, inverters and
as freewheeling diodes.
TO-3PN package
«- c
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Ip(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)
1200
V
30
A
Peak Repetitive Forward Current
IFRM
(Rated VR,Square Wave,20kHz)
30
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions
300
half-wave, single phase, 60Hz)
Junction Temperature
-65-175
'stg
Storage Temperature Range
-65-175
--•-D
mm
DIM MIN MAX
A 19.90 20.10
B 15.38 15.42
C 4.75 4.85
D 0.9€ 1.10
E 1.90' 2.10
F 3.40' 3.60
H 3.20 3.40
J _0.595 0.605
K _19.95 20.25
L 1.98 2.02
N 10.89 10.91
Q ^{4.95 5.05}
R 3.35 3.45
S 1.995 2.005
y 5.90 6.10
Y 9.90 10.10
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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