MU4891 Datasheet, PDF (1/2 Pages) Digitron Semiconductors – SILICON UNIJUNCTION TRANSISTOR

J.
CX
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MU4891 (SILICON)
thru
MU4894
, Una.
TELEPHONE: [phone]
[phone]
FAX: [phone]
SILICON ANNULAR PLASTIC UNIJUNCTION TRANSISTORS
. . . designed for military and industrial use in pulse, timing,
triggering, sensing, and oscillator circuits. The annular process
provides low leakage current, fast switching and low peak-point
currents as well as outstanding reliability and uniformity.
Recommended usage includes:
• Long-time Delay Circuits • MU4894
• Silicon Controlled Rectifier Triggering Circuits - MU4893
• High-frequency Relaxation-Oscillator Circuits - MU4892
• General-Purpose Unijunction Applications - MU4891
MAXIMUM RATINGS (T* = 25 -C unless otherwise noted)
Rating
Symbol
Value
RMS Power Dissipation*
PQ
300
RMS Emitter Current
I(
50
Peak Pulse Emitter Current**
1£
1. 0**
Emitter Reverse Voltage
VB2E
30
Storage Temperature Range
T.
-65 to +150
Unit
mW
mA
Amp
Volts
°C
* Derate 3. 0 mW/"C increase in Ambient temperature, Total power dissipation
(available power to Emitter and Base-Two) must be 11mited by external cir-
cultry. Interbase voltage <VMBJ) limited by power diiislpation,
VB»! -i*zr*D
" Capacitance discharge current must fall to 0. 37 Amp r»ithin 3. 0 ms and PRR
s 10 PPS.
1* •
sf*
* ^*
1
•
PN UNIJUNCTION
TRANSISTORS
/
,i^rAi •
N
SEATING^?
PLANE j_
II
K
STYLE 9:
PIN 1.
2
3
BASE 1
EMITTER
BASE 2
JrP-
a H-
\n"S jyr^ B
J.b »
DIM MIN
A
4.4EO
B 3.180
C 4.320
D 0.407
F
0.407
K 1Z.700
L 1.150
N
-
P 6.350
d 3.430
R 2.410
S 2.030
MAX
5.200
4.190
5.330
0.533
0.482
-
1.390
1.270
-
-
2,670
2.670
INCHES
MIN MAX
0.175 0.205
0.125 0.1E5
0.170 0.210
0.016 0.021
0.016 0.011
0-500
-
0.045 0.055
0.050
0.250
0.135
0.095 0.105
0.080 0.105
TO-92