MTP5N40E Datasheet, PDF (1/2 Pages) Motorola, Inc – TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

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SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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TMOS E-FET ™
High Energy Power FET
N-Channel Enhancement-Mode Silicon Gate
This advanced high voltage TMOS E-FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated
Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source-to-Drain Diode Designed to Replace External
Zener Transient Suppressor — Absorbs High Energy in the
Avalanche Mode
• Source-to-Drain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
Tf.
TMOS
D <?
MTP5N40E
TMOS POWER FET
5.0 AMPERES
400 VOLTS
MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
Rating
Symbol
Drain-Source Voltage
Drain-Gate Voltage (Res = 1 -° Mfi)
Gate-Source Voltage — Continuous
— Non-repetitive
Drain Current — Continuous
— Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
'DM
PD
Operating and Storage Temperature Range
TJ. Tstg
UNCLAMPED DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS (Tj < 150"C)
Single Pulse Drain-to-Source Avalanche Energy — Tj = 25DC
— Tj = 100°C
Repetitive Pulse Drain-to-Source Avalanche Energy
WDSR(1)
WDSR (2)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds
Rejc
R9JA
TL
TO-220AB
Value
400
400
±20
±40
5.0
12
75
0.6
-55 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/°C
°c
290
mJ
46
7.4
1.67
°c/w
62.5
260
°c
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