MTP50N06V Datasheet, PDF (1/2 Pages) Motorola, Inc – TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

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TMOS V™
Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
TMOS V is a new technology designed to achieve an on-resis-
tancearea product about one-half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E-FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
• On-resistance Area Product about One-half that of Standard
MOSFETs with New Low Voltage, Low RDS(OH) Technology
• Faster Switching than E-FET Predecessors
Features Common to TMOS V and TMOS E-FETS
• Avalanche Energy Specified
• bSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and
TMOS E-FET
D9
OS
MTP50N06V
TMOS POWER FET
42 AMPERES
60 VOLTS
RDS(on) = 0.028 OHM
TO-220AB
MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
Rating
Drain-Source Voltage
Drain-Gate Voltage (Res = 1 .0 M£2)
Gate-Source Voltage — Continuous
— Non-Repetitive (tp < 10 ms)
Drain Current — Continuous @ 25°C
— Continuous® 100°C
— Single Pulse (tp < 10 us)
Total Power Dissipation @ 25°C
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain-tc—Source AvalancheEnergy — Starting Tj = 25°C
0/DD = 25VdC, V(3s = 1QVdc, l|_ = 42Apk, L = 0.454 uH, RQ = 25 n)
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
I DM
PD
Tj, Tstg
EAS
RBJC
RGJA
TL
Value
60
60
+ 20
+ 25
42
30
147
125
0.83
-55 to 175
400
1.2
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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