MTP4N80E Datasheet, PDF (1/2 Pages) Motorola, Inc – TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM

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Designer's™ Data Sheet
TMOS E-FET ™
Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced TMOS
E-FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain-to-source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• 'DSS and Vos(on) Specified at Elevated Temperature
If
TMOS
Go
MTP4N80E
TMOS POWER FET
4.0 AMPERES
800 VOLTS
RDS(on) = 3.0
MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
Rating
Drain-Source Voltage
Drain-Gate Voltage (Rgs = 1 -0 M£2)
Gate-Source Voltage — Continuous
— Non-Repetitive (tp < 10 ms)
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp < 10 us)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy — Starting Tj = 25°C
(VDD = 100 VdC, VQS = 10 VdC, l|_ = S.O Apk, L = 10 mH, RG = 25 £1)
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds
os
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Tj, Ts,g
EAS
R9JC
R9JA
TL
TO-220AB
Value
800
800
±20
±40
4.0
2.9
12
125
1.0
-55 to 150
320
1.0
62.5
260
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
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