MTP3N55 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – HIGH VOLTAGE POWER MOSFET N-CHANNEL

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Dnc.
TELEPHONE: [phone]
[phone]
FAX: [phone]
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TWOS
These TMOS Power FETs are designed for high voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100"C
• Designer's Data — IQSS- vDS(on)- vGS(th) an<i SOA Specified
at Elevated Temperature
• Rugged — SOA Is Power Dissipation Limited
• Source-to-Dra!n Diode Characterized for Use With Inductive Loads
MTM3N60
MTP3N55
MTP3N60
TMOS POWER FETs
3 AMPERES
'DS(on) = 2.5 OHMS
550 and 600 VOLTS
MAXIMUM RATINGS
Ruling
Drain-Source Voltage
Drain-Gate Voltage
(RQS = 1 IWl)
Gate-Source Voltage — Continuous
— Non-repetitive (tp « so ps)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TC = JB'C
Derate above 25'C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient
TO-204
TO-220
Maximum Lead Temperature for Soldering
Purposes, 1/8* from case for 5 seconds
Symbol
Vrjss
VDGR
VQS
VGSM
ID
IDM
PD
Tj- T«g
"we
"«JA
TL
MTM3N90
MTP3N55
Unit
MTP3N60
650
BOO
Vdc
550
600
Vdc
±20
±40
3
10
76
0,6
-6510 150
Vdc
Vpk
Adc
Watts
\WC
•c
°C/W
1.67
30
62.5
27G
•c
MTM3NBO
TO-ZMAA
CO-&OAB
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors