MTP3055E Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET

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MTP3055E
N-CHANNEL 60V-0.1Q-12A TO-220
STripFET™ MOSFET
TYPE
VDSS
RDS(on)
ID
MTP3055E
60 V < 0.15 a 12 A
TYPICAL RDS(on) = 0.1 Q
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175°C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (Res = 20 kii)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 °C
IDM
IDM(-)
Plot
Tstg
Drain Current (pulsed) at Tc = 100 °C
Drain Current (pulsed)
Total Dissipation at Tc = 25 °C
Storage Temperature
Tj Max. Operating Junction Temperature
{•) Pulse width limited by safe operating area
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
Value
60
60
± 20
12
9
48
40
-65 to 175
175
Unit
V
V
V
A
A
A
W
°C
°c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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