MTP2N80 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Power Field Effect Transistor

zSzmL-donductoi ZPioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MTP2N80
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TMOS
TELEPHONE: [phone]
[phone]
FAX; [phone]
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MAXIMUM RATINGS
Bntlng
Symbol
Drain Source Voltage
Drain Gate Voltage (855 - 1 Mill
Gate-Source Voltage — Continuous
— Non-repetitive(tp ^ 50 ^s)
Drain Current — Continuous
— Pulsed
Total Power Dissipation <<? TC - 25"C
Derate above 25"C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Cflse
Junction to Ambient
TO ?04
10220
Maximum Lead Temperature for Solrifiinq
Purposes, 1^8' from case for 5 seconds
VDSS
VDGR
VGS
VGSM
ID
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PD
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800
800
*20
*40
2
7
75
0.6
65 to 1 50
1.67
30
625
27S
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
wrc
"C
"C/VV
"C
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NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time or"going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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