MTP2N60E Datasheet, PDF (1/2 Pages) Motorola, Inc – TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

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TMOS E-FET ™
Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance overtime. In addition, this advanced TMOS
E-FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
ir
drain-to-source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
TMOS
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
DO
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
6S
ar|d Vps(on) Specified at Elevated Temperature
MTP2N60E
TMOS POWER FET
2.0 AMPERES
600 VOLTS
RDS(on) = 3.8 OHMS
TO-220AB
MAXIMUM RATINGS (TC = 25°C unless otherwisenoted)
Rating
Drain-to-Source Voltage
Drain-to-Gate Voltage (RQS = 1 -° Mti)
Gate-to-Source Voltage — Continuous
— Single Pulse (tp < 50 (is)
Drain Current — Continuous
— Single Pulse (tp < 10 us)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy — Starting Tj = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, L = 95 mH, RG = 25 0, Peak IL = 2.0 Adc)
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds
Symbol
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
EAS
Rejc
R0JA
TL
Value
600
600
±20
±40
2.0
9.0
50
0.4
-55 to 150
190
2.5
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
mJ
°C/W
°C
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