MTP12P05 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Power Field Effect Transistor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
One.
Designer's Data Sheet
Power Field Effect Transistor
P-Channel Enhanceme^*nt-Mode
Silicon Gate TMOS
These TMOS Power FETs are designed for medium voltage,
high speed power switching applications such as switching regu-
lators, converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100°C
• Designer's Data — IpSS- vDS(on)< vGS(th) and SOA Specified
at Elevated Temperature
t Rugged — SOA is Power Dissipation Limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
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MTM12P05
MTM12P06
MTM12P08
MTM12P10
MTP12P05
MTP12P06
MTP12P08
MTP12P10
TMOS POWER FETs
12 AMPERES
fDSIonl = 0-3 OHM
50, $0, 80 and 100 VOLTS
MAXIMUM RATINGS
Drain-Source Voltage
Drain-Gate Voltage
(Res = i wn)
Gate-Source Voltage — Continuous
— Non-repetitive {tp ^ 50 ^s)
Drain Current
Continuous
Pulsed
Total Power Dissipation (a TC = 25°C
Derate above 25"C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Ambient
TO-204
TO-220
Maximum Lead Temperature for Soldering
Purposes, 1/8" from case for 5 seconds
MTM OR MTP
12P05 12P06 12P08 12P10
VDSS ^{50 60 80 100 Vdc}
VDGR ^{50 60 80 100 Vdc}
VGS
VGSM
ID
'DM
PD
Tj,Tstg
±20
±40
12
28
75
0.6
-65 to 150
Vdc
Vpk
Adc
Watts
vyrc
°c"
RWC
R»JA
TL
"CAW
1.67
30
62.5
275
•c
MTM12P05
MTM12P06
MTM12P08
MTM12P10
TO-204AA
MTP12P05
MTP12P06
MTP12P08
MTP12P10
TO-220AB
Quality Semi-Conductors