MTP12N08L Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – Power Field Effect Transistor

^s.mi-Conducto'i
u
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, L/nc.
Designer's Data Sheet
Power Field Effect Transistor
N-Channel Enhancement-Mode
Silicon Gate TMOS
These Logic LaveJ TMOS Power FETs are designed for high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
• Low Drive Requirement to Interface Power Loads to Logic Level
»Cs or Microprocessors — VQS(th) s 2 Volts m8X
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100*0
• Designer's Data — I&SS. VDS(on)' VQS(th) a«d SOA Specified
at Elevated Temperature
• Rugged •— SOA is Power Dissipation limited
• Source-to-Drain Diode Characterized for Use With Inductive Loads
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MTP12N08L
MTP12N10L
TMOS POWER FETs
LOGIC LEVEL
AMPERES
*DS(onJ - 0.1SOHM
80 and 700 VOLTS
MAXIMUM RATINGS
Rating
Symbol
Draift'Source Voltage
Drain-Gate Voltage <f»GS = 1 Mft)
Gate-Source Voltage
Drain Current — Continuous
— Pulsed
Towl Power Dissipation @ TC = 25"C
Derate above 25"C
Voss
L VDGR
VGS
ID
'DM
' PD
Operating and Storage Temperature Range
Tj. TSq
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Junction to Arnbient
Maximum Lead Temperature for Soldering
Purposes. 1/8" from casa for S seconds
«WC
RWA
TL
ELECTRICAL CHARACTERISTICS (Tc = 2S'C
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
«VGS = o. ID «= 2SO ^AI
Zero Gate Voltage Drain Currant
(Vos = Rated VpsS- VGS " OI
(Vps « R«*d VDSS- vcss « o. TJ = 125*0
MTP12N001 MTP12N10L
80
100
80
100
= 1S
12
30
75
0.6
-6510150
Unit
Vdc
V<JC
Vde
Adc
Watts
w/*c
•c
7.67
62.5
275
noted)
Symbol
"C/W
•c
HWW
vtep|oss
MTPIZNOSL
80
MTP12N1OL
100
IDSS
__
TO-220AB
Max
—
1
L
X
Unit
Vdc
»tAOc
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