MTM60N06 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

f«y_/ ^smi-donauctoi LProducti, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
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FAX: [phone]
MTM55N10
MTM60N06
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
TMOS POWER FIELD EFFECT TRANSISTOR
These TMOS Power FETs are designed for low voltage, high
speed power switching applications such as switching regulators,
converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds — Switching Times
Specified at 100-C
• Designer's Data — Irjss. vDS(on)< vGS(th) and SOA
Specified at Elevated Temperature
• Rugged — SOA is Power Dissipation Limited
• Source-to-Dram Diode Characterized for Use With Inductive
Loads
Do
KT
55 and 60 AMPERE
N-CHANNEL TMOS
POWER FETs
100 VOLTS
0.028 OHM
W VOLTS
(TO-204AE)
TMOS
O5
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
(FIGS = 1 Mil)
Gate-Source Voltage
Continuous
Non-repetitive |tp « 50 MS)
Drain Current
Continuous
Pulsed
Total Power
Dissipation @ TC = 25°C
Derate above 25' C
Operating and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance
Junction to Case
Maximum Lead Temp, for
Soldering Purposes, 1/8"
from case for 5 seconds
Symbol
VDSS
VDGR
VQS
VGSM
ID
'DM
PD
Tj, Tstg
Rfljc
TL
MTM
60N06
5BN10
60
100
60
100
±20
= 40
60
55
300
275
250
2
-65 to 150
0.5
300
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
WfC
"C
'CflN
'C
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheetsare current before placing orders.
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