MTM5N35 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – IRF330-333/IRF730-733 MTM/MTP5N35/5N40 N-Channel Power MOSFETs

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
TELEPHONE: [phone]
[phone]
FAX: [phone]
IRF330-333/IRF730-733
MTM/MTP5N35/5N40
N-Channel Power MOSFETs,
5.5 A, 350 V/400 V
Power And Discrete Division
Description
These devices are n-channol, enhancement mode, power
MOSFETs designed especially for high voltage, high speed
applications, such as off-line switching power supplies,
UPS, AC and DC motor controls, relay and solenoid
drivers.
TO-220AB
• VQS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• "DSS. VDS(on). »w» * VQS(lh) apecmi
Temperature
' Rua9ed
Maximum Ratings
IRF330
|RF331
IRF332
IRF333
MTM5N35
MTM5N4°
IRF730
|RF?31
IRF732
IRF733
MTP5N3S
MTPSN4°
Symbol
VDSS
VDOR
Characteristic
Drain to Source Voltage
Drain to Gate Voltage
Rating
Rating
IRF330/332
IRF331/333
IRF730/732
IRF731/733
MTM/MTP5N40
MTM/MTP5N36
Unit
400
350
V
400
350
V
VGS
Tj, Tslg
Gate to Source Voltage
Operating Junction and
Storage Temperature
TL
Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s
Maximum On-State Characteristics
RDS (on) ^{Static Drain-to-Source}
On Resistance
ID
Drain Current
Continuous
Pulsed
Maximum Thermal Characteristics
RSJC
Thermal Resistance,
Junction to Case
PD
Total Power Dissipation
at Tc = 25°C
±20
-55 to +150
275
±20
-55 to +150
275
IRF330/331
IRF730/731
1.0
5.5
22
1.67
75
IRF332/333
IRF732/733
1.5
4.5
22
1.67
75
MTM5N35/40
MTP5N35/40
1.0
5.0
22
1.67
75
V
°c
«c
n
A
°C/W
W
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notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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